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dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorYang, Tsung-Yuen_US
dc.contributor.authorKao, Kuo-Hsingen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:11:36Z-
dc.date.available2014-12-08T15:11:36Z-
dc.date.issued2007en_US
dc.identifier.isbn978-7-5617-5228-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/8902-
dc.description.abstractIn this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFrs) with high-k HfO2 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Various nitrogen does 5 X 10(13) and 5 X 10(14) cm(-2) were implanted after gate dielectric deposition. Significant improvement 94.4% and 74.4% on transconductance G(m) and field effect mobility, respectively, are observed due to the nitrogen implantation. In addition, a substantial gate leakage current reduction over four orders is also obtained to decrease undesirable power dissipation. Finally, a high performance LTPS-TFT with low subthreshold swing 0.177 V/decade and threshold voltage about 1 V can be achieved without any other hydrogen plasma passivation treatments.en_US
dc.language.isoen_USen_US
dc.subjecthigh-k gate dielectricen_US
dc.subjectHfO2en_US
dc.subjectnitrogen implantationen_US
dc.subjectthin-film transistors (TFT)en_US
dc.titleMobility improvement of HfO2 LTPS-TFTs with nitrogen implanataionen_US
dc.typeProceedings Paperen_US
dc.identifier.journalAD'07: Proceedings of Asia Display 2007, Vols 1 and 2en_US
dc.citation.spage674en_US
dc.citation.epage677en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000248022600168-
Appears in Collections:Conferences Paper