低溫製作高移動率偏置型鋁閘極複晶矽薄膜電晶體

標題:	低溫製作高移動率偏置型鋁閘極複晶矽薄膜電晶體 Low Temperature Processed High Mobility Offset Al-Gate Polysilicon Thin-Film Transistors
作者:	葉清發交通大學電子工程系
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-047
URI:	http://hdl.handle.net/11536/89155 https://www.grb.gov.tw/search/planDetail?id=720343&docId=135309
Appears in Collections:	Research Plans

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