| 標題: | GaN/GaInN量子結構及藍紫光雷射二極體研究(III3) Study the Characteristics of GaN/GaInN Quantum Structure and Blue Laser Diode (III) |
| 作者: | 李威儀 LEE WEI-I 交通大學電子物理系 |
| 公開日期: | 2006 |
| 官方說明文件#: | NSC95-2112-M009-001 |
| URI: | http://hdl.handle.net/11536/89212 https://www.grb.gov.tw/search/planDetail?id=1277458&docId=234016 |
| Appears in Collections: | Research Plans |
- GaN/GaInN量子結構及藍紫光雷射二極體研究(I) / 李威儀;LEE WEI-I
- GaN/GaInN量子結構及藍紫光雷射二極體研究 / 李威儀;LEE WEI-I
- GaN/GaInN量子結構及藍紫光雷射二極體研究(II) / 李威儀;LEE WEI-I
- 氮化鎵材料製程開發及元件製作(III) / 王興宗;WANG SHING CHUNG
- Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers / Chen, Jun-Rong;Lee, Chung-Hsien;Ko, Tsung-Shine;Chang, Yi-An;Lu, Tien-Chang
- GaN/AlGaN和InGaN/AlInGaN多量子井雷射二極體之模擬最佳化主動層研究 / 蘇柏源;Po-Yuan Su;郭浩中;盧廷昌;H.C. Kuo
- Improved 1.3-mu m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature / Lin, Wei-Hsun;Wang, Kai-Wei;Lin, Shih-Yen;Wu, Meng-Chyi
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