| 標題: | 砷化銦自聚式量子點內應力鬆弛效應與材料交互混合產生的電性缺陷的影響(II) Effects of Strain Relaxation and Material Intermixing on the Production of Electrically Active Defects in Inas Self-Assembled Quamtum Dots(II) |
| 作者: | 陳振芳 CHEN JENN-FANG 交通大學電子物理系 |
| 公開日期: | 2006 |
| 官方說明文件#: | NSC95-2112-M009-010 |
| URI: | http://hdl.handle.net/11536/89295 https://www.grb.gov.tw/search/planDetail?id=1274436&docId=233166 |
| 顯示於類別： | 研究計畫 |
- 砷化銦自聚式量子點內應力鬆弛效應與材料交互混合產生的電性缺陷的影響(I) / 陳振芳;CHEN JENN-FANG
- 砷化銦自聚式量子點內應力鬆弛效應與材料交互混合產生的電性缺陷的影響(III) / 陳振芳;CHEN JENN-FANG
- Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation / Chen, J. F.;Yang, C. H.;Wu, Y. H.;Chang, L.;Chi, J. Y.
- Strain study of self-assembled InAs quantum dots by ion channeling technique / Wang, Hsing-Yeh;Lee, Chien-Ping;Niu, H.;Chen, C. H.;Wu, S. -C.
- How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness? / Chen, J. F.;Lin, Y. C.;Chiang, C. H.;Chen, Ross C. C.;Chen, Y. F.
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