标题: | Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process |
作者: | Weng, Yi-Hsin Tsai, Hui-Wen Ker, Ming-Dou 电机学院 College of Electrical and Computer Engineering |
公开日期: | 1-五月-2011 |
摘要: | A new charge pump circuit has been proposed to suppress the return-back leakage current without suffering the gate-oxide reliability problem in low-voltage CMOS process. The four-phase clocks were used to control the charge-transfer devices turning on and turning off alternately to suppress the return-back leakage current. A test chip has been implemented in a 65-nm CMOS process to verify the proposed charge pump circuit with four pumping stages. The measured output voltage is around 8.8 V with 1.8-V supply voltage to drive a capacitive output load, which is better than the conventional charge pump circuit with the same pumping stages. By reducing the return-back leakage current and without suffering gate-oxide overstress problem, the new proposed charge pump circuit is suitable for applications in low-voltage CMOS IC products. (C) 2011 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.microrel.2010.12.016 http://hdl.handle.net/11536/8938 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2010.12.016 |
期刊: | MICROELECTRONICS RELIABILITY |
Volume: | 51 |
Issue: | 5 |
起始页: | 871 |
结束页: | 878 |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.