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dc.contributor.authorMaksymovych, Peteren_US
dc.contributor.authorSeidel, Janen_US
dc.contributor.authorChu, Ying Haoen_US
dc.contributor.authorWu, Pingpingen_US
dc.contributor.authorBaddorf, Arthur P.en_US
dc.contributor.authorChen, Long-Qingen_US
dc.contributor.authorKalinin, Sergei V.en_US
dc.contributor.authorRamesh, Ramamoorthyen_US
dc.date.accessioned2014-12-08T15:11:39Z-
dc.date.available2014-12-08T15:11:39Z-
dc.date.issued2011-05-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl104363xen_US
dc.identifier.urihttp://hdl.handle.net/11536/8941-
dc.description.abstractTopological walls separating domains of continuous polarization, magnetization, and strain in ferroic materials hold promise of novel electronic properties, that are intrinsically localized on the nanoscale and that can be patterned on demand without change of material volume or elemental composition. We have revealed that ferroelectric domain walls in multiferroic BiFeO(3) are inherently dynamic electronic conductors, closely mimicking memristive behavior and contrary to the usual assumption of rigid conductivity. Applied electric field can cause a localized transition between insulating and conducting domain walls, tune domain wall conductance by over an order of magnitude, and create a quasicontinuous spectrum of metastable conductance states. Our measurements identified that subtle and microscopically reversible distortion of the polarization structure at the domain wall is at the origin of the dynamic conductivity. The latter is therefore likely to be a universal property of topological defects in ferroelectric semiconductors.en_US
dc.language.isoen_USen_US
dc.titleDynamic Conductivity of Ferroelectric Domain Walls in BiFeO(3)en_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl104363xen_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume11en_US
dc.citation.issue5en_US
dc.citation.spage1906en_US
dc.citation.epage1912en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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