標題: 可應用於射頻辨識系統之新穎垂直型無銦鎵元素氧化物薄膜元件與其關鍵驅動電路技術開發
Novel vertical thin-film devices with indium-gallium free oxide semiconductor and driving circuits for radio frequency identification technology applications
作者: 劉柏村
LIU PO-TSUN
國立交通大學光電工程學系(所)
關鍵字: 無銦鎵元素非晶態氧化物半導體;非揮發性記憶體;射頻辨識系統;垂直型薄膜電晶體表;In-Ga free amorphous oxide semiconductor;nonvolatile memory;radio frequency identification (RFID);vertical thin film transistors (VTFT).
公開日期: 2013
官方說明文件#: NSC100-2628-E009-016-MY3
URI: http://hdl.handle.net/11536/89456
https://www.grb.gov.tw/search/planDetail?id=2858980&docId=405943
Appears in Collections:Research Plans