| 標題: | 閘穿隧電流, 遷移率, 及隨機電報雜訊作為金屬閘高介質應變鰭狀及平面場效電晶體物理機制之測試載具研究 Gate Tunneling Current, Mobility, and Random Telegraph Signals as Test Vehicles of the Physical Mechanisms in Strained FinFETs and Planar MOSFETs with Metal Gate High-k Dielectrics |
| 作者: | 陳明哲 CHEN MING-JER 國立交通大學電子工程學系及電子研究所 |
| 關鍵字: | 金屬閘;高介質;應變;場效電晶體;鰭狀場效電晶體;高等元件物理;高等缺陷物理;高等可靠性物理;閘穿隧電流;遷移率;隨機電報雜訊;遠聲子散射;遠庫倫散射;量子模擬器;負偏壓溫度不穩定;正偏壓溫度不穩定;Metal Gate;High-k;Strain;FET;FinFET;advanced device physics;advanced defect physics;advanced reliability physics;gate tunneling current;mobility;random telegraph signals (RTS);remote phonon scattering;remote Coulomb scattering;quantum simulat |
| 公開日期: | 2013 |
| 官方說明文件#: | NSC100-2221-E009-017-MY3 |
| URI: | http://hdl.handle.net/11536/89471 https://www.grb.gov.tw/search/planDetail?id=2866874&docId=408142 |
| 顯示於類別： | 研究計畫 |
