| 標題: | 開發具備新型堆疊式閘極氧化層與自動對準增高式源/汲極結構之高效能低溫複晶矽薄膜電晶體(III) The Investigation and Fabrication of High Performance Poly-Si TFT with a Novel Stacked Gate Dielectric and Self-Aligned Raised Source/Drain Structure(III) |
| 作者: | 張國明 CHANG KOW-MING 交通大學電子工程系 |
| 公開日期: | 2006 |
| 官方說明文件#: | NSC95-2221-E009-287 |
| URI: | http://hdl.handle.net/11536/89524 https://www.grb.gov.tw/search/planDetail?id=1309559&docId=242001 |
| 顯示於類別： | 研究計畫 |
- 開發具備新型堆疊式閘極氧化層與自動對準增高式源/汲極結構之高效能低溫複晶矽薄膜電晶體(II) / 張國明;CHANG KOW-MING
- 開發具備新型堆疊式閘極氧化層與自動對準增高式源/汲極結構之高效能低溫複晶矽薄膜電晶體(I) / 張國明;CHANG KOW-MING
- Novel low-temperature polysilicon thin-film transistors with a self-aligned gate and raised source/drain formed by the damascene process / Chang, Kow Ming;Lin, Gin Min;Yang, Guo Liang
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