完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 汪大暉 | en_US |
dc.contributor.author | WANG TAHUI | en_US |
dc.date.accessioned | 2014-12-13T10:29:52Z | - |
dc.date.available | 2014-12-13T10:29:52Z | - |
dc.date.issued | 2006 | en_US |
dc.identifier.govdoc | NSC95-2221-E009-271 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/89738 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1309492&docId=241985 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 奈米CMOS元件量子效應與電荷傳輸模擬及電性與可靠性分析(III) | zh_TW |
dc.title | Nano-CMOS Charge Ballistic Transport, Quantum Effect, Characterization, and Reliability Study(III) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 交通大學電子工程系 | zh_TW |
顯示於類別: | 研究計畫 |