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dc.contributor.authorHwang, C. S.en_US
dc.contributor.authorJan, J. C.en_US
dc.contributor.authorChang, C. S.en_US
dc.contributor.authorChen, S. D.en_US
dc.contributor.authorChang, C. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.date.accessioned2019-04-03T06:35:56Z-
dc.date.available2019-04-03T06:35:56Z-
dc.date.issued2011-04-28en_US
dc.identifier.issn1098-4402en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevSTAB.14.044801en_US
dc.identifier.urihttp://hdl.handle.net/11536/8984-
dc.description.abstractThe in-vacuum undulator with a permanent magnet at room temperature is a mature technology and is widely used; with a short period length in a medium-energy facility, it can enhance photon brilliance in the hard x-ray region. A cryogenic permanent magnet has been investigated as an in-vacuum undulator; this undulator will become the best prospective device to satisfy the requirements of a photon source with great brilliance in the hard x-ray region. For the further hard x-ray region, a superconducting wiggler can provide great flux with a continuous spectrum, whereas a superconducting undulator will provide great brilliance with a discrete spectrum. High-temperature superconducting wires are highly promising for use in the development of superconducting undulators; unique algorithms for their development with an extremely short period in a small-magnet gap have been devised. Some out-of-vacuum planar undulators with special functions must also be fabricated to enable diverse applications in various light-source facilities. This article describes current and future developments for insertion devices in storage-ring and free-electron-laser facilities and discusses their feasibility for use therein.en_US
dc.language.isoen_USen_US
dc.titleDevelopment trends for insertion devices of future synchrotron light sourcesen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevSTAB.14.044801en_US
dc.identifier.journalPHYSICAL REVIEW SPECIAL TOPICS-ACCELERATORS AND BEAMSen_US
dc.citation.volume14en_US
dc.citation.issue4en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000290158700002en_US
dc.citation.woscount14en_US
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