GaNAs與GaInNAs的磊晶成長與特性研究

標題:	GaNAs與GaInNAs的磊晶成長與特性研究 Epitaxial Growth and Characterization Study of GaNAs and GaInNAs
作者:	李威儀 LEE WEI-I 交通大學電子物理系
關鍵字:	氮砷化鎵;氮砷化銦鎵;砷化鎵;有機金屬氣相磊晶法;深能階缺陷;長波長雷射;量子井;GaNAs;GaInNAs;GaAs;Metalorganic chemical vapor deposition (MOCVD);Deep level defect;Long-wavelength laser;Quantum well;Dimethylhydrazine (DMHy);DLT
公開日期:	2000
官方說明文件#:	NSC89-2112-M009-011
URI:	http://hdl.handle.net/11536/90008 https://www.grb.gov.tw/search/planDetail?id=523567&docId=95079
Appears in Collections:	Research Plans

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