Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Terry Tai-Jui | en_US |
dc.contributor.author | Chen, Chao-Jui | en_US |
dc.contributor.author | Teng, I-Ju | en_US |
dc.contributor.author | Hsieh, Ing-Jar | en_US |
dc.contributor.author | Kuo, Cheng-Tzu | en_US |
dc.date.accessioned | 2014-12-08T15:11:45Z | - |
dc.date.available | 2014-12-08T15:11:45Z | - |
dc.date.issued | 2011-04-01 | en_US |
dc.identifier.issn | 1941-4900 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1166/nnl.2011.1161 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9017 | - |
dc.description.abstract | The capacitance-voltage measurements and microstructures of Iridium-nanocrystals embedded in two main stack devices of "Al/SiO(2)/Ir-NCs/SiO(2)/Si-Sub/Al" and "Al/SiO(2)/Ir-NCs/Si(3)N(4)/SiO(2)/SiSub/Al" have been compared for the application of nonvolatile memory. It has been demonstrated that the device performance of Si(3)N(4)/SiO(2) tunneling bi-layer (former stack) is much better than the single SiO(2) tunneling layer in terms of program/erase (P/E) efficiency and memory window size (up to 12.6 V at +/-10 V sweeping voltages), though 5% degrade in data retentions. Furthermore, endurances of two devices can stand 10(4) cycles without failure under P/E stressing condition of +/-9 V, 100 ms. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Ir Nanocrystals on Asymmetric Si(3)N(4)/SiO(2) Tunneling Layer with Large Memory Window for Nonvolatile Memory Application | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1166/nnl.2011.1161 | en_US |
dc.identifier.journal | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | en_US |
dc.citation.volume | 3 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 235 | en_US |
dc.citation.epage | 239 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
Appears in Collections: | Articles |