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dc.contributor.authorChen, K. N.en_US
dc.contributor.authorTsang, C. K.en_US
dc.contributor.authorWu, W. W.en_US
dc.contributor.authorLee, S. H.en_US
dc.contributor.authorLu, J. Q.en_US
dc.date.accessioned2014-12-08T15:11:49Z-
dc.date.available2014-12-08T15:11:49Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2011.3813en_US
dc.identifier.urihttp://hdl.handle.net/11536/9059-
dc.description.abstractA method to fabricate nano-scale Cu bond pads for improving bonding quality in 3D integration applications is reported. The effect of Cu bonding quality on inter-level via structural reliability for 3D integration applications is investigated. We developed a Cu nano-scale-height bond pad structure and fabrication process for improved bonding quality by recessing oxides using a combination of SiO(2) CMP process and dilute HF wet etching. In addition, in order to achieve improved wafer-level bonding, we introduced a seal design concept that prevents corrosion and provides extra mechanical support. Demonstrations of these concepts and processes provide the feasibility of reliable nano-scale 3D integration applications.en_US
dc.language.isoen_USen_US
dc.subjectCuen_US
dc.subjectWafer Bondingen_US
dc.subjectSealen_US
dc.subject3D Integrationen_US
dc.titleFabrication of Nano-Scale Cu Bond Pads with Seal Design in 3D Integration Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2011.3813en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume11en_US
dc.citation.issue4en_US
dc.citation.spage3336en_US
dc.citation.epage3339en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000289176100076-
dc.citation.woscount3-
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