完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ma, William Cheng-Yu | en_US |
dc.contributor.author | Chiang, Tsung-Yu | en_US |
dc.contributor.author | Yeh, Chi-Ruei | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.contributor.author | Lei, Tan-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:11:49Z | - |
dc.date.available | 2014-12-08T15:11:49Z | - |
dc.date.issued | 2011-04-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2011.2104362 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9065 | - |
dc.description.abstract | In this paper, the channel-film-thickness effect of low-temperature polycrystalline-Si thin-film transistors (LTPS-TFTs) is investigated. Greater channel film thickness can provide a higher field-effect mobility mu FE, rising from 14.33 to 22.33 cm(2)/V . s, as the channel film thickness increases from 55 to 120 nm, due to grain-size effect. In addition, varying the channel film thickness of LTPS-TFTs results in different junction leakage current due to the source/drain (S/D) junction area effect. Moreover, the S/D series resistance also significantly increases when the channel film thickness is reduced from 120 to 35 nm, leading to poor field-effect mobility mu FE and driving current. Consequently, the optimum channel film thickness for active-matrix liquid-crystal displays may be identified. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Channel film thickness | en_US |
dc.subject | low-temperature polycrystalline-Si thin-film transistors (LTPS-TFTs) | en_US |
dc.subject | scaling down | en_US |
dc.title | Channel Film Thickness Effect of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2011.2104362 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 58 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 1268 | en_US |
dc.citation.epage | 1272 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000288676200049 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |