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dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorHung, Ya-Chien_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.contributor.authorKao, Ming-Jeren_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:11:50Z-
dc.date.available2014-12-08T15:11:50Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2104936en_US
dc.identifier.urihttp://hdl.handle.net/11536/9077-
dc.description.abstractThis letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiO(X)/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction.en_US
dc.language.isoen_USen_US
dc.titleRedox Reaction Switching Mechanism in RRAM Device With Pt/CoSiO(X)/TiN Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2104936en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume32en_US
dc.citation.issue4en_US
dc.citation.spage545en_US
dc.citation.epage547en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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