完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, Chun-Cheng | en_US |
dc.contributor.author | Wang, Chung-Yi | en_US |
dc.contributor.author | Wu, Jieh-Tsorng | en_US |
dc.date.accessioned | 2014-12-08T15:11:50Z | - |
dc.date.available | 2014-12-08T15:11:50Z | - |
dc.date.issued | 2011-04-01 | en_US |
dc.identifier.issn | 0018-9200 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JSSC.2011.2109511 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9084 | - |
dc.description.abstract | An 8-channel 6-bit 16-GS/s time-interleaved analog-to-digital converter (TI ADC) was fabricated using a 65 nm CMOS technology. Each analog-to-digital channel is a 6-bit flash ADC. Its comparators are latches without the preamplifiers. The input-referred offsets of the latches are reduced by digital offset calibration. The TI ADC includes a multi-phase clock generator that uses a delay-locked loop to generate 8 sampling clocks from a reference clock of the same frequency. The uniformity of the sampling intervals is ensured by digital timing-skew calibration. Both the offset calibration and the timing-skew calibration run continuously in the background. At 16 GS/s sampling rate, this ADC chip achieves a signal-to-distortion-plus-noise ratio (SNDR) of 30.8 dB. The chip consumes 435 mW from a 1.5 V supply. The ADC active area is 0.93 x 1.58 mm(2). | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Analog-digital conversion | en_US |
dc.subject | calibration | en_US |
dc.subject | clocks | en_US |
dc.subject | comparators | en_US |
dc.subject | flash ADC | en_US |
dc.subject | offset | en_US |
dc.subject | time-interleaved ADC | en_US |
dc.subject | time interleaving | en_US |
dc.subject | timing circuits | en_US |
dc.subject | timing skew | en_US |
dc.title | A CMOS 6-Bit 16-GS/s Time-Interleaved ADC Using Digital Background Calibration Techniques | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JSSC.2011.2109511 | en_US |
dc.identifier.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | en_US |
dc.citation.volume | 46 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 848 | en_US |
dc.citation.epage | 858 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000288762800014 | - |
dc.citation.woscount | 29 | - |
顯示於類別: | 期刊論文 |