Improve the electrical properties of NILC poly-Si films using a gettering substrate

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DC 欄位	值	語言
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.contributor.author	Hu, Chen-Ming	en_US
dc.contributor.author	Lin, Chi-Ching	en_US
dc.date.accessioned	2014-12-08T15:11:52Z	-
dc.date.available	2014-12-08T15:11:52Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9101	-
dc.description.abstract	Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (alpha-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, this technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using alpha-Si-coated wafers as Ni-gettering substrates. After gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were reduced.	en_US
dc.language.iso	en_US	en_US
dc.title	Improve the electrical properties of NILC poly-Si films using a gettering substrate	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	13	en_US
dc.citation.epage	14	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000258177700002	-
顯示於類別：	會議論文