新型絕緣層上覆晶奈米元件(III)

Full metadata record

DC Field	Value	Language
dc.contributor.author	崔秉鉞	en_US
dc.contributor.author	Bing-YueTsui	en_US
dc.date.accessioned	2014-12-13T10:31:48Z	-
dc.date.available	2014-12-13T10:31:48Z	-
dc.date.issued	2004	en_US
dc.identifier.govdoc	NSC93-2215-E009-004	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/91156	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1026610&docId=195155	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新型絕緣層上覆晶奈米元件(III)	zh_TW
dc.title	A Novel SOI Nano Device(III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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