利用金屬壓印技術製作低溫複晶矽薄膜電晶體及擇區奈米碳管(II)

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DC Field	Value	Language
dc.contributor.author	吳耀銓	en_US
dc.contributor.author	YEWCHUNG SERMONWU	en_US
dc.date.accessioned	2014-12-13T10:31:50Z	-
dc.date.available	2014-12-13T10:31:50Z	-
dc.date.issued	2004	en_US
dc.identifier.govdoc	NSC93-2216-E009-015	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/91168	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1028108&docId=195613	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	利用金屬壓印技術製作低溫複晶矽薄膜電晶體及擇區奈米碳管(II)	zh_TW
dc.title	The Fabrication of Low Temperature Poly-Si TFT and Selective Area Carbon Nanotubes by Metal Imprint(II)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學材料科學與工程系	zh_TW
Appears in Collections:	Research Plans

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