矽鍺非應力層在高速電晶體及射頻元件的應用

Full metadata record

DC Field	Value	Language
dc.contributor.author	荊鳳德	en_US
dc.contributor.author	CHIN ALBERT	en_US
dc.date.accessioned	2014-12-13T10:31:57Z	-
dc.date.available	2014-12-13T10:31:57Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-100	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/91252	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=583875&docId=109703	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	矽鍺非應力層在高速電晶體及射頻元件的應用	zh_TW
dc.title	Application of Strain-Relaxed SiGe in High Speed Transistor and RF Devices	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans

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