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dc.contributor.authorChung, Chung-Houen_US
dc.date.accessioned2019-04-03T06:39:59Z-
dc.date.available2019-04-03T06:39:59Z-
dc.date.issued2011-03-07en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.83.115308en_US
dc.identifier.urihttp://hdl.handle.net/11536/9153-
dc.description.abstractThe dynamical decoherence rate and charge susceptibility of a nonequilibrium quantum dot close to a dissipative quantum phase transition are calculated. The setup concerns a resonance-level quantum dot coupled to two spinless fermionic baths with a finite bias voltage and an ohmic bosonic bath representing a dissipative environment. The system is equivalent to an anisotropic Kondo model. As dissipation strength increases, the system at zero temperature and zero bias exhibits a quantum phase transition of the Kosterlitz-Thouless (KT) type between a conducting delocalized phase and an insulating localized phase. Within the nonequilibrium frequency-dependent renormalization group (RG) approach, the finite bias crossover in dynamical decoherence rate and charge susceptibility close to the transition are addressed. The dynamical decoherence rate is found to increase with increasing frequency. In the delocalized phase, it shows a singularity at frequencies equal to positive or negative bias voltage. As the system cross overs to the localized phase, the decoherence rate at low frequencies gets progressively smaller and the singular feature is gradually smeared out, leading to a single linear frequency dependence. The dynamical charge susceptibility at low frequencies shows a dip-to-peak crossover across the transition. Relevance of these results to the experiments is discussed.en_US
dc.language.isoen_USen_US
dc.titleDynamical properties of a nonequilibrium quantum dot close to a dissipative quantum phase transitionen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.83.115308en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume83en_US
dc.citation.issue11en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000288071100006en_US
dc.citation.woscount0en_US
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