標題: Organic thin film transistors with novel solution-process polymeric gate insulators
作者: Tsai, Yan-Chu
Tsai, Shu-Ting
Chuang, Chiao-Shun
Cheng, Jung-An
Chen, Fang-Chung
Shieh, Han-Ping D.
顯示科技研究所
Institute of Display
公開日期: 2007
摘要: Novel OTFTs polymeric gate dielectric insulators derived from PMMA and PVP, named PHE, POH and F3, were demonstrated. By using the novel insulators, those OTFTs showed acceptable electrical characteristics including higher on/off ratio of five order of magnitude, low subthreshold swing about 2 V/decade and mobility around 0.1 cm(2)/Vs. F3 based devices, especially have the most stable I-V and C-V characteristics to replace PVP.
URI: http://hdl.handle.net/11536/9157
ISBN: 978-957-28522-4-8
期刊: IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007
起始頁: 377
結束頁: 380
顯示於類別:會議論文