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dc.contributor.author張翼en_US
dc.date.accessioned2014-12-13T10:32:53Z-
dc.date.available2014-12-13T10:32:53Z-
dc.date.issued2003en_US
dc.identifier.govdocNSC92-2215-E009-046zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/91771-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=873497&docId=167343en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title應用在Ku波段之摻雜及非摻雜氮化鎵高功率微波元件之製作及高頻特性量測與比較(I)zh_TW
dc.titleComparision of the Properties of Delta-Doped and Un-Doped Gallium Nitride High Power Microwave Devices for Ku Band Application (I)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學材料科學與工程學系zh_TW
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