| 標題: | 應用在Ku波段之摻雜及非摻雜氮化鎵高功率微波元件之製作及高頻特性量測與比較(I) Comparision of the Properties of Delta-Doped and Un-Doped Gallium Nitride High Power Microwave Devices for Ku Band Application (I) |
| 作者: | 張翼 國立交通大學材料科學與工程學系 |
| 公開日期: | 2003 |
| 官方說明文件#: | NSC92-2215-E009-046 |
| URI: | http://hdl.handle.net/11536/91771 https://www.grb.gov.tw/search/planDetail?id=873497&docId=167343 |
| Appears in Collections: | Research Plans |
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