Full metadata record
DC FieldValueLanguage
dc.contributor.author羅正忠en_US
dc.date.accessioned2014-12-13T10:33:31Z-
dc.date.available2014-12-13T10:33:31Z-
dc.date.issued2003en_US
dc.identifier.govdocNSC92-2215-E009-025zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/92103-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=879092&docId=168785en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title奈米世代MOSFET關鍵製程技術之研發(II)zh_TW
dc.titleKey Process Technology Research and Development of Nanometer Generation MOSFET (II)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程研究所zh_TW
Appears in Collections:Research Plans


Files in This Item:

  1. 922215E009025.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.