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dc.contributor.authorLu, Hau-Yanen_US
dc.contributor.authorChung, Wan-Fangen_US
dc.contributor.authorTseng, Tzu-Yien_US
dc.contributor.authorChen, Yu-Chengen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChi, Sienen_US
dc.date.accessioned2014-12-08T15:12:01Z-
dc.date.available2014-12-08T15:12:01Z-
dc.date.issued2007en_US
dc.identifier.isbn978-957-28522-4-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/9212-
dc.description.abstractThe influence of protrusion grain boundary on the degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress is investigated. The degradation of TFT with protrusion grain boundary is more severe and the different damage of the source/drain junction in the TFT with grain boundary closed to source side.en_US
dc.language.isoen_USen_US
dc.titleStudy on degradation of crystallized laterally grown poly-Si TFT under Dynamic Stressen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007en_US
dc.citation.spage503en_US
dc.citation.epage504en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000258177700129-
Appears in Collections:Conferences Paper


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