Study on degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lu, Hau-Yan	en_US
dc.contributor.author	Chung, Wan-Fang	en_US
dc.contributor.author	Tseng, Tzu-Yi	en_US
dc.contributor.author	Chen, Yu-Cheng	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Chang, Ting-Chang	en_US
dc.contributor.author	Chi, Sien	en_US
dc.date.accessioned	2014-12-08T15:12:01Z	-
dc.date.available	2014-12-08T15:12:01Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9212	-
dc.description.abstract	The influence of protrusion grain boundary on the degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress is investigated. The degradation of TFT with protrusion grain boundary is more severe and the different damage of the source/drain junction in the TFT with grain boundary closed to source side.	en_US
dc.language.iso	en_US	en_US
dc.title	Study on degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	503	en_US
dc.citation.epage	504	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000258177700129	-
顯示於類別：	會議論文