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dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorChang, Wei-Tingen_US
dc.contributor.authorHsu, Hung-Wenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorLiao, Wei-Tsaien_US
dc.contributor.authorTanikawa, Tomoyukien_US
dc.contributor.authorHonda, Yoshioen_US
dc.contributor.authorYamaguchi, Masahitoen_US
dc.contributor.authorSawaki, Nobuhikoen_US
dc.date.accessioned2014-12-08T15:12:02Z-
dc.date.available2014-12-08T15:12:02Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.1143/APEX.4.039201en_US
dc.identifier.urihttp://hdl.handle.net/11536/9224-
dc.language.isoen_USen_US
dc.titleReduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)en_US
dc.typeCorrectionen_US
dc.identifier.doi10.1143/APEX.4.039201en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume4en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000288199000023-
dc.citation.woscount0-
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