Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)

doi:10.1143/APEX.4.039201

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chiu, Ching-Hsueh	en_US
dc.contributor.author	Lin, Da-Wei	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.contributor.author	Li, Zhen-Yu	en_US
dc.contributor.author	Chang, Wei-Ting	en_US
dc.contributor.author	Hsu, Hung-Wen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.contributor.author	Liao, Wei-Tsai	en_US
dc.contributor.author	Tanikawa, Tomoyuki	en_US
dc.contributor.author	Honda, Yoshio	en_US
dc.contributor.author	Yamaguchi, Masahito	en_US
dc.contributor.author	Sawaki, Nobuhiko	en_US
dc.date.accessioned	2014-12-08T15:12:02Z	-
dc.date.available	2014-12-08T15:12:02Z	-
dc.date.issued	2011-03-01	en_US
dc.identifier.issn	1882-0778	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/APEX.4.039201	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9224	-
dc.language.iso	en_US	en_US
dc.title	Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)	en_US
dc.type	Correction	en_US
dc.identifier.doi	10.1143/APEX.4.039201	en_US
dc.identifier.journal	APPLIED PHYSICS EXPRESS	en_US
dc.citation.volume	4	en_US
dc.citation.issue	3	en_US
dc.citation.epage		en_US
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000288199000023	-
dc.citation.woscount	0	-
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