Title: | Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs |
Authors: | Lin, Y. C. Shie, Sheng-Li Shie, Tin-En Wong, Yuen-Yee Chen, K. S. Chang, E. Y. 材料科學與工程學系 Department of Materials Science and Engineering |
Keywords: | Copper metalization;Cu/Ge/Pd Ohmic contact;InGaAs |
Issue Date: | 1-Mar-2011 |
Abstract: | This study investigates electrical characteristics and the formation mechanism of the Cu/Ge/Pd Ohmic contact to n-type InGaAs. After annealing the contact at 250 degrees C for 20 min, Cu(3)Ge and Pd(12)Ga(5)As(2) compounds formed and Ge diffused into the InGaAs layer, achieving a heavily doped InGaAs layer with a low contact resistivity of 1 x 10(-6) Omega cm(2). Thermal stability tests were performed on the Cu/Ge/Pd Ohmic contact to InGaAs after Ohmic contact formation, showing no obvious degradation after a 72 h reliability test at 250 degrees C. The results indicate excellent electrical characteristics and thermal stability using Cu/Ge/Pd as an Ohmic contact metal to an n-InGaAs layer. |
URI: | http://dx.doi.org/10.1007/s11664-010-1410-2 http://hdl.handle.net/11536/9233 |
ISSN: | 0361-5235 |
DOI: | 10.1007/s11664-010-1410-2 |
Journal: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 40 |
Issue: | 3 |
Begin Page: | 289 |
End Page: | 294 |
Appears in Collections: | Articles |
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