標題: | An Investigation of Diffusion Barrier Characteristics of an Electroless Co(W, P) Layer to Lead-Free SnBi Solder |
作者: | Pan, Hung-Chun Hsieh, Tsung-Eong 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Diffusion barrier;electroless Co(W,P);lead-free SnBi solder;intermetallic compounds |
公開日期: | 1-三月-2011 |
摘要: | Diffusion barrier characteristics for eutectic SnBi solder/electroless Co(W,P) couples were investigated via liquid-state aging at 250 degrees C and solid-state aging at 120 degrees C. At the couple interface, CoSn(3) intermetallic compound (IMC) spallation was observed for the SnBi/amorphous Co(W,P) couple subjected to liquid-state aging. In contrast, no spallation of IMCs was observed for the SnBi/amorphous Co(W,P) couples subjected to solid-state aging. For the SnBi/polycrystalline Co(W,P) couple, a thick IMC layer was observed adjacent to a tungsten-enriched amorphous interfacial layer regardless of aging conditions. IMC formation in all samples indicated that Co(W,P) is essentially a sacrificial barrier to SnBi solder. However, amorphous Co(W,P) might also exhibit stuffed-type barrier behavior due to its relatively high phosphorus (P) content. Analytical results indicated that the P content in Co(W,P) is a crucial factor affecting the structural evolution at the SnBi/electroless Co(W,P) interface. |
URI: | http://dx.doi.org/10.1007/s11664-010-1488-6 http://hdl.handle.net/11536/9236 |
ISSN: | 0361-5235 |
DOI: | 10.1007/s11664-010-1488-6 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 40 |
Issue: | 3 |
起始頁: | 330 |
結束頁: | 339 |
顯示於類別: | 期刊論文 |