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dc.contributor.authorHsu, Hsing-Huien_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorLuo, Cheng-Weien_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2014-12-08T15:12:04Z-
dc.date.available2014-12-08T15:12:04Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2010.2098033en_US
dc.identifier.urihttp://hdl.handle.net/11536/9244-
dc.description.abstractIn this paper, we have proposed a simple and novel way to fabricate poly-Si nanowire (NW)-silicon-oxide-nitride-oxide-silicon (SONOS) devices with various gate configurations. Three types of devices having various gate configurations, such as side gated, O-shaped gated OG, and gate-all-around (GAA), were successfully fabricated and characterized. The experimental results show that, owing to the superior gate controllability over NW channels, much improved transfer characteristics are achieved with the GAA devices, as compared with the other types of devices. Moreover, GAA devices also exhibit the best memory characteristics among all splits, including the fastest programming/erasing efficiency, largestmemory window, and best endurance/retention characteristics, highlighting the potential of such scheme for future SONOS applications.en_US
dc.language.isoen_USen_US
dc.subjectField-effect transistor (FET)en_US
dc.subjectmultiple gate (MG)en_US
dc.subjectnanowire (NW)en_US
dc.subjectpoly-Sien_US
dc.subjectsilicon-oxide-nitride-oxide-silicon (SONOS)en_US
dc.titleImpacts of Multiple-Gated Configuration on the Characteristics of Poly-Si Nanowire SONOS Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2010.2098033en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume58en_US
dc.citation.issue3en_US
dc.citation.spage641en_US
dc.citation.epage649en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000287665700008-
dc.citation.woscount5-
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