新世代鐵電非揮發性記憶元件(III)

Full metadata record

DC Field	Value	Language
dc.contributor.author	曾俊元	en_US
dc.contributor.author	TSEUNG-YUENTSENG	en_US
dc.date.accessioned	2014-12-13T10:34:02Z	-
dc.date.available	2014-12-13T10:34:02Z	-
dc.date.issued	2003	en_US
dc.identifier.govdoc	NSC92-2215-E009-016	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/92462	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=873418&docId=167320	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新世代鐵電非揮發性記憶元件(III)	zh_TW
dc.title	Next Generation Non-Volatile Ferroelectric Memory (III)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans

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