標題: Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
作者: Wang, Sheng-Chun
Su, Pin
Chen, Kun-Ming
Chen, Bo-Yuan
Huang, Guo-Wei
Hung, Cheng-Chou
Huang, Sheng-Yi
Fan, Cheng-Wen
Tzeng, Chih-Yuh
Chou, Sam
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Metal-oxide-semiconductor field-effect transistors (MOSFETs);noise;radio frequency (RF);temperature;tensile strained;van der Ziel model
公開日期: 1-Mar-2011
摘要: For the first time, the high-frequency noise behavior of tensile-strained n-channel metal-oxide-semiconductor field-effect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has better small-signal behaviors (higher f(t) and f(max)) and noise characteristics (smaller NF(min) and R(n)) than the control device.
URI: http://dx.doi.org/10.1109/TED.2010.2104153
http://hdl.handle.net/11536/9250
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2104153
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 58
Issue: 3
起始頁: 895
結束頁: 900
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