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dc.contributor.authorWang, Sheng-Chunen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorChen, Bo-Yuanen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorHung, Cheng-Chouen_US
dc.contributor.authorHuang, Sheng-Yien_US
dc.contributor.authorFan, Cheng-Wenen_US
dc.contributor.authorTzeng, Chih-Yuhen_US
dc.contributor.authorChou, Samen_US
dc.date.accessioned2014-12-08T15:12:04Z-
dc.date.available2014-12-08T15:12:04Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2010.2104153en_US
dc.identifier.urihttp://hdl.handle.net/11536/9250-
dc.description.abstractFor the first time, the high-frequency noise behavior of tensile-strained n-channel metal-oxide-semiconductor field-effect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has better small-signal behaviors (higher f(t) and f(max)) and noise characteristics (smaller NF(min) and R(n)) than the control device.en_US
dc.language.isoen_USen_US
dc.subjectMetal-oxide-semiconductor field-effect transistors (MOSFETs)en_US
dc.subjectnoiseen_US
dc.subjectradio frequency (RF)en_US
dc.subjecttemperatureen_US
dc.subjecttensile straineden_US
dc.subjectvan der Ziel modelen_US
dc.titleInvestigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2010.2104153en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume58en_US
dc.citation.issue3en_US
dc.citation.spage895en_US
dc.citation.epage900en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000287665700045-
dc.citation.woscount0-
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