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dc.contributor.authorChao, Tzu-Yuanen_US
dc.contributor.authorLiang, Chia-Weien_US
dc.contributor.authorCheng, Y. T.en_US
dc.contributor.authorKuo, Chien-Nanen_US
dc.date.accessioned2014-12-08T15:12:04Z-
dc.date.available2014-12-08T15:12:04Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2010.2102357en_US
dc.identifier.urihttp://hdl.handle.net/11536/9251-
dc.description.abstractThis paper presents a low-cost heterogeneous integration technology combining the previously developed bumpless radio-frequency (RF) system-on-a-package scheme with a special surface cleaning process to assemble a complementary metal-oxide-semiconductor chip with an organic substrate (SU-8/polydimethylsiloxane) by low-temperature Au-Au thermocompressive bonds (< 200 degrees C) for flexible wireless microsystem fabrication. The RF performance of -15 dB return loss and -0.25 dB insertion loss at 40 GHz and above 6 MPa bonding strength of a microstrip-to-coplanar-waveguide interconnect transition between the chip and the substrate make the technology practical for flexible wireless microsystem integration.en_US
dc.language.isoen_USen_US
dc.subjectAu-Au thermocompressive (TC) bondingen_US
dc.subjectbumpless interconnectingen_US
dc.subjectflexible electronicsen_US
dc.subjectflip-chipen_US
dc.subjectheterogeneous chip integrationen_US
dc.subjectsurface cleaningen_US
dc.titleHeterogeneous Chip Integration Process for Flexible Wireless Microsystem Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2010.2102357en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume58en_US
dc.citation.issue3en_US
dc.citation.spage906en_US
dc.citation.epage909en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000287665700047-
dc.citation.woscount2-
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