金屬閘極金氧半場效電晶體關鍵技術(II)

Full metadata record

DC Field	Value	Language
dc.contributor.author	崔秉鉞	en_US
dc.contributor.author	Bing-YueTsui	en_US
dc.date.accessioned	2014-12-13T10:34:34Z	-
dc.date.available	2014-12-13T10:34:34Z	-
dc.date.issued	2002	en_US
dc.identifier.govdoc	NSC91-2215-E009-018	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/92843	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=736722&docId=139408	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	金屬閘極金氧半場效電晶體關鍵技術(II)	zh_TW
dc.title	Key Technologies of Metal Gate MOSFET (II)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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