| 標題: | 193奈米微影解像度增進技術---高透射率嵌附層之研製、應用探討與模擬 193 nm Resolution Enhancement Techniques---Fabrication, Application Study and Simulation of High Transmittance Embedded Layers |
| 作者: | 龍文安 Loong Wen-an 交通大學應用化學系 |
| 公開日期: | 2002 |
| 官方說明文件#: | NSC91-2215-E009-064 |
| URI: | http://hdl.handle.net/11536/93058 https://www.grb.gov.tw/search/planDetail?id=784474&docId=150790 |
| Appears in Collections: | Research Plans |
- 193奈米微影用正規與高透射率嵌附層材料之探討及減光型相移圖罩應用之模擬 / 林政旻;Cheng-ming Lin;龍文安;Dr. Loong Wen-an
- The simulation of application of high transmittance AttPSM for sub-100 nm pattern in 248 nm lithography / Lin, CM;Loong, WA
- 鉬矽氧嵌附式減光型相移圖罩之研製與模擬 / 陳玉蓉;Chen Yu-rung;龍文安;Loong Wen-an
- 193奈米高透射率嵌附層之研製與作為濕浸式微影光學鄰近效應修正用散條之性質探討 / 龍文安;Loong Wen-an
- Chemical stability of embedded material for attenuated phase-shifting mask and application of high-transmittance attenuated phase-shifting mask for 0.1 mu m contact pattern in 193 nm lithography / Lin, CM;Loong, WA
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