一種新穎絕緣層上矽動態起啟電壓金氧半元件

標題:	一種新穎絕緣層上矽動態起啟電壓金氧半元件 A Novel SOI-DTMOS Device
作者:	趙天生 TIEN-SHENGCHAO 交通大學電子物理系
公開日期:	2002
官方說明文件#:	NSC91-2215-E009-052
URI:	http://hdl.handle.net/11536/93088 https://www.grb.gov.tw/search/planDetail?id=784431&docId=150778
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.