High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts

標題:	High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts
作者:	Chao, TS Lee, YJ Huang, TY 電子物理學系電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics
關鍵字:	dynamic threshold voltage MOSFET (DTMOS);Schottky substrate junction;temperature effect
公開日期:	1-Feb-2004
摘要:	In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.
URI:	http://dx.doi.org/10.1109/LED.2003.822656 http://hdl.handle.net/11536/27075
ISSN:	0741-3106
DOI:	10.1109/LED.2003.822656
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	25
Issue:	2
起始頁:	86
結束頁:	88
Appears in Collections:	Articles

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