High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation

標題:	High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation
作者:	Chang, SJ Chang, CY Chao, TS Huang, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	DTMOS;indium SSR
公開日期:	1-三月-2000
摘要:	In this letter, we demonstrate a high-performance 0.1 mu m Dynamic Threshold Voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., < 0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low V-th simutaneously, which results in an excellent performance for the indium-implanted DTMOS.
URI:	http://dx.doi.org/10.1109/55.823577 http://hdl.handle.net/11536/30686
ISSN:	0741-3106
DOI:	10.1109/55.823577
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	21
Issue:	3
起始頁:	127
結束頁:	129
顯示於類別：	期刊論文

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