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dc.contributor.authorChao, TSen_US
dc.contributor.authorLee, YJen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:39:39Z-
dc.date.available2014-12-08T15:39:39Z-
dc.date.issued2004-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2003.822656en_US
dc.identifier.urihttp://hdl.handle.net/11536/27075-
dc.description.abstractIn this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.en_US
dc.language.isoen_USen_US
dc.subjectdynamic threshold voltage MOSFET (DTMOS)en_US
dc.subjectSchottky substrate junctionen_US
dc.subjecttemperature effecten_US
dc.titleHigh-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contactsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2003.822656en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume25en_US
dc.citation.issue2en_US
dc.citation.spage86en_US
dc.citation.epage88en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000188807300013-
dc.citation.woscount1-
Appears in Collections:Articles


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