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dc.contributor.authorYang, Hao-Ien_US
dc.contributor.authorChang, Ming-Hungen_US
dc.contributor.authorLin, Tay-Jyien_US
dc.contributor.authorOu, Shih-Haoen_US
dc.contributor.authorDeng, Siang-Senen_US
dc.contributor.authorLiu, Chih-Weien_US
dc.contributor.authorHwang, Weien_US
dc.date.accessioned2014-12-08T15:02:14Z-
dc.date.available2014-12-08T15:02:14Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-1656-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/930-
dc.description.abstractIn this paper, a low-power embedded memory module is designed for a multi-threaded DSP processor. A codesign of circuit and architecture technique is proposed. The technique includes three circuit schemes: controllable precharged bit-line, low voltage bit-line, and controllable data-retention power gating. Because the low-power control signals are generated by the DSP engine, the operating condition of the memory module can be arbitrarily adjusted by using software programming. The integration of low-power dual-port 8KB SRAM and the multi-threaded DSP engine is implemented in TSMC 130nm CMOS technology. By using these techniques, the overall access power reduction of the DSP core is around 15.30%-16.84%.en_US
dc.language.isoen_USen_US
dc.titleA controllable low-power dual-port embedded SRAM for DSP processoren_US
dc.typeProceedings Paperen_US
dc.identifier.journalMTTD 2007 TAIPEI: PROCEEDINGS OF 2007 IEEE INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN, AND TESTING (MTD '07)en_US
dc.citation.spage27en_US
dc.citation.epage30en_US
dc.contributor.department電子與資訊研究中心zh_TW
dc.contributor.departmentMicroelectronics and Information Systems Research Centeren_US
dc.identifier.wosnumberWOS:000257508500005-
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