标题: 全固态离子型薄膜元件开发
Development of thin films device by plasma-based ion process
作者: 刘柏村
Po-Tsun Liu
国立交通大学光电工程研究所
关键字: 铜铟镓硒;抗反射层;可挠式;Cu(In;Ga)Se2;antireflection coatings;flexible
公开日期: 2013
摘要: 本计画主要目标是发展具有奈米抗反射层(Anti-reflective coating; ARC)结构的铜铟镓硒(Cu(In,Ga)Se2; CIGS)薄膜太阳能电池技术。利用奈米结构的抗反射层来增加光捕获效果(Light trapping),以提升CIGS 太阳能电池的光电转化效率。在此计划中,我们不使用任何催化剂或模板来辅助薄膜成长,即可利用简易的水热法来合成柱状与花瓣状的氧化锌奈米结构层。藉由药品溶液的浓度、试剂的化学计量、温度与酸硷度(PH)的优化,我们可以控制奈米结构的尺寸和几何形状。最后,将氧化锌奈米阵列应用于无硒化铜铟镓硒薄膜太阳能电池元件的制作,以达成全波段低反射效果与提升太阳能电池元件光电转换效率。在整个研究的过程中,我们也尝试将无硒化铜铟镓硒薄膜应用在可挠式不锈钢基板上,作为可挠式(R2R) CIGS 薄膜太阳电池的塑胶基板材料,朝向可挠性、大面积、低耗能、低成本及环保制程为目标。
Solar cells are one of the most important devices of renewable energy, because of their ability to convert sunlight directly to electrical energy. Therefore, efficiency boosting techniques like advanced antireflection coatings (ARCs) are highly demanded. In this project, we will propose a simple hydrothermal route to synthesize the rod-like and flower-like ZnO nanostructures without the use of any catalysts, in order to reduce the surface reflection of Cu(In,Ga)Se2 (CIGS) thin film colar cell device. Moreover, the size and shape of the nano-structures grown by this technique can be controlled by adjusting the growth parameters, such as the concentration of chemical solution, reagents stoichiometry, temperature and pH value. The crystallinity, structure, and morphology of ZnO nanoparticles will be examined and the formation mechanism will be discussed from the angle of nucleation and morphology. Furthermore, optical properties of as-synthesized ZnO nanostructures will be studied. Finally, the Cu(In,Ga)Se2 thin film solar cells with ZnO nanorod antireflective coatings will be manufactured and studied for the improvement of conversion efficiency. In the study, we'll aim for flexible (Roll-to-Roll), large-area, low-energy, low-cost and environmentally friendly on the fabrication of the CIGS solar cells using the stainless-steel substrates.
官方说明文件#: 1022001INER015
URI: http://hdl.handle.net/11536/93111
https://www.grb.gov.tw/search/planDetail?id=2872266&docId=409220
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