一種新式氮化矽快閃式記憶元件研究(II)

Full metadata record

DC Field	Value	Language
dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.date.accessioned	2014-12-13T10:35:03Z	-
dc.date.available	2014-12-13T10:35:03Z	-
dc.date.issued	2002	en_US
dc.identifier.govdoc	NSC91-2215-E009-019	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93183	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=736725&docId=139409	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	一種新式氮化矽快閃式記憶元件研究(II)	zh_TW
dc.title	Physics, Characterization and Design of Oxide-Nitride-Oxide Flash EEPROM Devices (II)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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