Study the electrical properties of non-crystalline semiconductor by admittance spectroscopy

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsieh, Ming-Ta	en_US
dc.contributor.author	Chang, Chan-Ching	en_US
dc.contributor.author	Chen, Jenn-Fang	en_US
dc.contributor.author	Zan, Hsiao-Wen	en_US
dc.contributor.author	Yen, Kuo-Hsi	en_US
dc.contributor.author	Chen, Chih-Hsien	en_US
dc.contributor.author	Lee, Yeong-Shyang	en_US
dc.date.accessioned	2014-12-08T15:12:09Z	-
dc.date.available	2014-12-08T15:12:09Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9323	-
dc.description.abstract	We developed three types of equivalent circuit model to investigate the electrical properties of non-crystalline semiconductor. From the equivalent circuit models, parameters of non-crystalline semiconductor can be easily obtained by admittance spectroscopy. This method also can be utilized in the optimization of device process as well.	en_US
dc.language.iso	en_US	en_US
dc.title	Study the electrical properties of non-crystalline semiconductor by admittance spectroscopy	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	608	en_US
dc.citation.epage	611	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000258177700159	-
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