标题: ADMITTANCE SPECTROSCOPY AND TRAPPING PHENOMENA OF ZNO BASED VARISTORS
作者: CHIOU, BS
CHUNG, MC
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: VARISTOR;ZNO;ADMITTANCE SPECTROSCOPY
公开日期: 1-十月-1991
摘要: Electrical properties of ZnO varistors are investigated through admittance spectroscopy. The observed ac admittance dispersion is caused by the existence of two deep bulk trap levels, which are 0.31 eV and 0.245 eV, respectively, below the conduction band. The 0.31 eV level is associated with the oxygen vacancy while the origin of the 0.245 eV level is not yet clear. An equivalent circuit model for ZnO varistors is proposed that is based on the existence of deep bulk traps.
URI: http://dx.doi.org/10.1007/BF02665979
http://hdl.handle.net/11536/3668
ISSN: 0361-5235
DOI: 10.1007/BF02665979
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 20
Issue: 10
起始页: 885
结束页: 890
显示于类别:Conferences Paper