ADMITTANCE SPECTROSCOPY AND TRAPPING PHENOMENA OF ZNO BASED VARISTORS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHIOU, BS	en_US
dc.contributor.author	CHUNG, MC	en_US
dc.date.accessioned	2014-12-08T15:05:08Z	-
dc.date.available	2014-12-08T15:05:08Z	-
dc.date.issued	1991-10-01	en_US
dc.identifier.issn	0361-5235	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/BF02665979	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3668	-
dc.description.abstract	Electrical properties of ZnO varistors are investigated through admittance spectroscopy. The observed ac admittance dispersion is caused by the existence of two deep bulk trap levels, which are 0.31 eV and 0.245 eV, respectively, below the conduction band. The 0.31 eV level is associated with the oxygen vacancy while the origin of the 0.245 eV level is not yet clear. An equivalent circuit model for ZnO varistors is proposed that is based on the existence of deep bulk traps.	en_US
dc.language.iso	en_US	en_US
dc.subject	VARISTOR	en_US
dc.subject	ZNO	en_US
dc.subject	ADMITTANCE SPECTROSCOPY	en_US
dc.title	ADMITTANCE SPECTROSCOPY AND TRAPPING PHENOMENA OF ZNO BASED VARISTORS	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1007/BF02665979	en_US
dc.identifier.journal	JOURNAL OF ELECTRONIC MATERIALS	en_US
dc.citation.volume	20	en_US
dc.citation.issue	10	en_US
dc.citation.spage	885	en_US
dc.citation.epage	890	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1991GH65700026	-
顯示於類別：	會議論文