不同型摻雜材料浮動閘極快閃式記憶元件可靠性問題之研究

標題:	不同型摻雜材料浮動閘極快閃式記憶元件可靠性問題之研究 A Study on the Reliability Issues of Flash EEPROM with Different Floating Gate Materials
作者:	莊紹勳 Chung Steve S 國立交通大學電子工程學系
關鍵字:	快閃式記憶體;可靠度;浮動閘;資料持久力;氧化層傷害;Frash memory;Reliability;Floating gate;Data retention;Oxide damage
公開日期:	2000
官方說明文件#:	NSC89-2218-E009-110
URI:	http://hdl.handle.net/11536/93274 https://www.grb.gov.tw/search/planDetail?id=619835&docId=115468
Appears in Collections:	Research Plans

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